Global Ferroelectric RAM Market 2016-2020

Overview of the global ferroelectric RAM (FeRAM) market

Market research analysts at Technavio have predicted that the global ferroelectric RAM (FeRAM) market will grow steadily during the forecast period and will post a CAGR of almost 6% by 2020. This market research analysis identifies the lower consumption of power by FeRAMs as one of the primary growth factors for this market. FeRAMs consume almost 50% less power than other flash memories and are mainly used in battery-powered wireless sensors. This increases the battery life and reduces maintenance costs, which will subsequently help vendors have a competitive edge over competitors by offering products at a comparatively lower price. Moreover, FeRAM has additional benefits over other RAMs as it has a faster wake-up time and also eliminates the need to save and restore data. FeRAM also helps in automatic system updates especially in wireless applications, which will again aid in the growth of the market.

The increasing adoption of FeRAM-based smart meters is identified to be one of the major trends that will gain traction in the market in the coming years. FeRAM-based smart meters have the feature to write data 1000 times faster than meters using other flash memory such as DRAM. Also, FeRAM consumes very less power which enables smart meter manufacturers to include RAM as a cost-effective memory hardware in their products. Additionally, F-RAM or FeRAM also improves the efficiency and lifespan of smart meters as it requires very less power and offers high write speed, which will result in an exponential increase in their adoption by smart meter vendors.

Competitive landscape and key vendors

FeRAM is an emerging technology and has gained attention only in some applications such as smart meters, smart cards, and event data recorder (EDR) in the automotive sector. The market is characterized by the presence of a very few major vendors. FeRAM delivers higher rewrite durability, faster data rewrite, and lower power consumption than the non-volatile memories used nowadays. As a result, there will be an increasing demand for FeRAMs, inturn, intensifying the competition among vendors to increase their revenue share from the market. One of the leading vendors ROHM recently announced the availability of a 64-Kbit FeRAM with a serial bus that is optimized for smart meters, car navigation systems, healthcare equipment, and other applications requiring frequent log data acquisition.

The vendors in the market are -

• Cypress Semiconductor
• Fujitsu
• Texas Instruments
• ROHM

Geographical segmentation and analysis of the FeRAM market

• Americas
• APAC
• EMEA

This market study estimates that in terms of geographical regions, the Americas will account for more than 52% of the total market shares of the FRAM or FeRAM market by 2020 and also predicts the region to dominate this market throughout the forecast period. Benefits of F-RAM such as low power consumption and faster write speed will result in an increase in its usage in various electronic devices, in turn, fueling the demand for FRAMs in this region. Moreover, advances in technology and the change in consumer preferences over the use of electronic devices is also predicted to play a significant role in augmenting the market’s growth prospects.

Key questions answered in the report include

• What will the ferroelectric RAM market size and growth rate be in 2020?
• What are the key factors driving the global ferroelectric RAM market?
• What are the key market trends impacting the growth of the global ferroelectric RAM market?
• What are the challenges to market growth?
• Who are the key vendors in the global ferroelectric RAM market?
• What are the market opportunities and threats faced by the vendors in the global ferroelectric RAM market?
• Trending factors influencing the market shares of the Americas, APAC, and EMEA.
• What are the key outcomes of the five forces analysis of the global ferroelectric RAM market?

Technavio also offers customization on reports based on specific client requirement.

Related reports

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• Global Mobile DRAM Market 2015-2019

A ferroelectric RAM, or FeRAM, F-RAM, or FRAM, is a random-access memory that is similar in construction to a dynamic random access memory (DRAM). FeRAM utilizes a ferroelectric layer instead of a dielectric layer to achieve non-volatility and offers the same functionality as flash memory. Lower power usage, a high number of write-erase cycles, and faster write performance are some of the advantages offered by FeRAM.

The report, global ferroelectric RAM market, is part of Technavio’s hardware and semiconductor research portfolio. This portfolio provides a comprehensive market analysis along with the market share, market sizing, and market segmentations covering areas such as computing devices, displays, embedded systems, human machine interface, lighting, semiconductor equipment, and sensors. These market research reports provide a perspective on the various market opportunities and market threats along with the key trends that would influence the market growth during the forecast period. It presents insights into the changing competitive landscape and a detailed profiling and market analysis of the vendors. Also covered in the research are the key regions or countries that would have an impact on the market during the assessment years.