Global Next Generation Memory Market 2017-2021

This market research report identifies suppliers like Cypress Semiconductor, Fujitsu, IBM, Intel, Micron Technology, ROHM Semiconductor, Samsung Electronics, Texas Instruments, and Toshiba as key vendors in the next generation memory market. It also presents a segmentation of the market by product (PCM, ReRAM, MRAM, and FeRAM), application (smartcards and enabled MCUs, mass storages, industrial and automotive, enterprise storage, and cell phones), and geography (the Americas, APAC, and EMEA).

Overview of the global next generation memory market

Technavio’s market research analyst predicts the global next generation memory market to grow steadily at a CAGR of around 67% by 2021. One of the primary drivers for this market is the rise in the demand for FeRAM in automotive applications. FeRAM has been successfully deployed in applications such as industrial control systems, mission critical space applications, industrial automation systems, and high-reliability military applications. High reliability of FeRAM cells and high write cycles make FeRAM an ideal semiconductor memory for next-generation automotive applications. Also, the applications include high fuel efficiency, enhanced safety features, high-end automation, and controls.  In the automotive sector, FeRAMs are used for non-volatile data logging in most sub-systems such as stability control, powertrain, smart airbags, dashboard instrumentation, battery management, engine controls, and infotainment applications. These advantages of FeRAMs are expected to augment the growth in the global next generation memory market during the forecast period.

In terms of geography, the Americas accounted for the maximum market share during 2016 and will continue to dominate the next generation storage technology market for the next few years. The potential benefits of next-generation memory technologies such as faster write speed and low power consumption are propelling their usage in various electronic devices. This, in turn, will support the growth of the next generation memory market in the region. Moreover, rapid technological advances and changes in consumer preferences over the use of electronic data storage devices are contributing to the demand for consumer electronics integrated with next-generation memory technologies in the Americas.

Competitive landscape and key vendors

The global next generation memory market is moderately fragmented due to the presence of both international and regional vendors present across the globe. The established vendors in the next generation storage technology market focus on the need for replacement of traditional memory solutions such as flash memory. Furthermore, data storage solution providers are trying to market their products through enabling features like low power consumption and high write speed that are in high demand among end-users.

Leading vendors in the market are –

• Cypress Semiconductor
• Fujitsu
• IBM
• Intel
• Micron Technology
• ROHM Semiconductor
• Samsung Electronics
• Texas Instruments
• Toshiba

Other prominent vendors in the next generation memory market include Adesto Technologies, Crossbar, and Everspin Technologies.

Segmentation by product and analysis of the next generation memory market

• PCM
• ReRAM
• MRAM
• FeRAM

During 2016, the MRAM segment dominated the next generation memory market and accounted for a major part of the overall market share. Factors such as the increasing adoption of spin-transfer torque magnetoresistive random-access memory (STT-MRAM) in mobile devices coupled with reliability and speed offered by MRAM that makes it suitable for use in nonvolatile memory (NVM) cache, ROM, and TCM applications are the major contributors to the dominance of this segment in the next generation storage technology market.

Segmentation by application and analysis of the next generation memory market

• Smartcards and enabled MCUs
• Mass storages
• Industrial and automotive
• Enterprise storage
• Cell phones

In this market study, analysts have estimated the cell phones segment to dominate the next generation storage technology market during the forecast period. The growing adoption of smartphone and tablet is the major driver for the growth of the cell phones segment in the global market. Also, with the increasing penetration of mobile networks such as 3G, 4G, and long-term evolution, smartphone users can access high-quality data in the form of music, videos, photos, and other interactive contents, this will further support the dominance of this segment in the next generation memory market.

Key questions answered in the report include

• What will the market size and the growth rate be in 2021?
• What are the key factors driving the global next generation memory market?
• What are the key market trends impacting the growth of the global next generation memory market?
• What are the challenges to market growth?
• Who are the key vendors in the global next generation memory market?
• What are the market opportunities and threats faced by the vendors in the global next generation memory market?
• Trending factors influencing the market shares of the Americas, APAC, and EMEA.
• What are the key outcomes of the five forces analysis of the global next generation memory market?

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