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The Gallium Nitride (GaN) RF Devices Market size is projected to increase by USD 1,610 million, at a CAGR of 17.42% between 2023 and 2028. The growth rate of the market depends on several factors including increasing use in broadcasting applications, growing infrastructural development for 5G cellular networks and growing demand from military and defense sector. The need for high power in very high frequency (VHF), ultra-high frequency (UHF), and microwave bands has led to the use of transistors that can supply tens to hundreds of watts at RF to 10 GHz and beyond. These devices are called GaN RF devices.
The report includes a comprehensive outlook on the market offering forecasts for the industry segmented by Application, which comprises cellular infrastructure, defense and military, CATV, and others. Additionally, it categorizes Material into GaN-on-Si, GaN-on-SiC, and GaN-on-Diamond and covers Region, including North America, APAC, Europe, Middle East and Africa, and South America. The report provides market size, historical data spanning from 2018 to 2022, and future projections, all presented in terms of value in USD million for each of the mentioned segments.
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The increasing use in broadcasting applications is notably driving market growth. GaN RF devices are commonly used for military communication systems and cellular infrastructure. These devices will find applications across other sectors, such as mobile radio, CATV, and broadcast. GaN is a technology that has been finding its applications in commercial applications owing to its unique material properties. GaN RF transistors have superior power output as compared to GaAs or silicon transistors. Good thermal conductivity, along with its high cut-off frequency, adds to the unique characteristics of GaN transistors. GaN devices offer the best solution for simultaneous high-power, high-frequency, and high-temperature operation.
Moreover, several companies in the GaN RF devices market are widening their product portfolio and offering GaN RF devices that are used for these applications. One such vendor is Ampleon Netherlands BV, offering devices for broadcasting, ISM, and RF energy. Ampleon offers a range of RF transistors and evaluation kits for RF instrumentation applications. Its wideband amplifiers feature low noise and are exceedingly linear, making them particularly suitable for feedback channels in a wide range of measuring equipment, including vector signal transceivers, signal generators, and RF power meters. Thus, the increasing use of GaN RF in broadcasting applications will boost the growth of the market during the forecast period.
Augmented use of IoT in GaN RF devices is an emerging trend influencing market growth. The semiconductor industry is adopting the IoT trend. Semiconductors are core to several products, including consumer electronics, household appliances, medical technology, cars, and many others. These products can communicate with each other through a burgeoning network connected by the Internet, which is referred to as the IoT. All IoT devices require semiconductors to connect and perform their intended functions. The semiconductors used include microcontrollers, sensors, and memory. The infrastructure to connect all of these devices will also rely on continued innovations in semiconductor technology.
In addition, the use of RF GaN technology could amplify the power capacity and bandwidth required for communicating with all these devices together. Moreover, GaN-based dies can operate in harsh environments and prolong the lifetime of devices. Thus, the increasing use of IoT in different applications will augment the growth of the market during the forecast period.
The high cost of raw materials and production process is a significant challenge hindering the market growth. The devices require heavy investment owing to the high cost of their manufacturing process. The process for the production of GaN RF devices is rather complex. Despite the high cost, vendors in the GaN RF devices market are involved in the large-scale manufacturing of the device due to the accelerated demand across applications. During the forecast period, GaN RF devices will replace silicon-based RF devices. Hence, most electronic devices in the future will have GaN RF semiconductor components.
Additionally, the GaN RF devices are priced at a high average selling price due to the relative novelty of this technology among applications such as broadcasting, and cellular infrastructure. Thus, vendors in the gallium nitride (GaN) RF devices market are finding it difficult to achieve economies of scale with the sale of GaN RF devices. The expensive manufacturing process, coupled with limited units shipped will negatively impact the market during the forecast period.
The market share growth by the cellular infrastructure segment will be significant during the forecast period. GaN has become popular in telecom applications, where high power density, switching frequency, and efficiency (combined with a small form factor) are mandatory requirements. Owing to its properties, GaN RF is ideal for setting up 5G infrastructure. GaN devices can handle more power than other high-frequency technologies, including GaAs.
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The cellular infrastructure segment was the largest and was valued at USD 400.00 million in 2018. Apart from 5G cellular networks, the ongoing trend in terms of 4G long-term evolution is carrier aggregation. This allows mobile network operators to combine several separate LTE carriers. This is done to increase the bandwidth and thereby increase the bit rate. Carrier aggregation (CA) enhances network performance and ensures a high-quality experience for end-users by enabling operators to provide high uplink and downlink data rates using their existing spectrum. Owing to its properties, GaN RF is used as an RF component in CA. Operators are beginning to implement downlink CA to offer faster data rates by combining spectrums from multiple RF bands. This will contribute to market growth for GaN RF devices in the cellular infrastructure segment during the forecast period.
Gan-on-Si material yields lower performance when compared to the alternatives, namely GaN-on-SiC and GaN-on-Diamond. However, it has the advantage of using a low-cost, large-wafer silicon CMOS and power silicon foundries. Owing to these factors, GaN-on-Si is the most popularly used form of material for GaN RF devices. This material is primarily cost-driven and used across devices such as mobile devices, RF energy, very small aperture terminal (VSAT), CATV, and fiber-optic applications. Currently, MACOM Technology Solutions Inc. is the worlds only provider of GaN-on-Si technology for RF applications. Its offerings are ideal for civil avionics, communications, networks, long-pulsed radar, as well as industrial, scientific, and medical applications. Owing to the large-scale commercialization of this technology, several vendors are likely to shift their focus toward the provision of this technology. Thus, the increasing use of Gan-on-Si in fiber-optic applications and mobile devices will boost the growth of the market during the forecast period.
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APAC is estimated to contribute 57% to the growth of the global market during the forecast period. Technavio's analysts have provided an extensive insight into the market forecast, detailing the regional trends and drivers influencing the market's trajectory throughout the forecast period. APAC has the potential to emerge as the largest market for the gallium nitride RF devices market. The increased defense and military expenditure for technologically advanced equipment will be among the primary reasons for the accelerated market trends and analysis rate of the region. This trend is due to the rise in the defense budget in China, which has been increasing its budget for the past decade. The growth in defense budgets, in terms of increased military workforce and ammunition, will create demand for GaN RF devices. The high population density of these nations, along with their economic growth, will boost the demand for power applications in network infrastructure to offer better services instead of congested networks and poor services, which were a common feature of these markets.
The APAC gallium nitride RF devices market will grow rapidly, owing to the high demand for improved cellular networks, especially in developing countries such as China, India, South Korea, Taiwan, and Malaysia. The aforementioned countries are now beginning almost completely to roll out 4G and LTE services. The high population density of these nations, along with their economic growth, will boost the demand for power applications in network infrastructure to offer better services instead of congested networks and poor services, which are a common feature of these markets. Such factors are expected to drive the regional market growth during the forecast period.
The market forecasting report includes the adoption lifecycle of the market research and growth, covering from the innovator’s stage to the laggard’s stage. It focuses on adoption rates in different regions based on penetration. Furthermore, the report also includes key purchase criteria and drivers of price sensitivity to help companies evaluate and develop their market growth and trends strategies.
Global Market Customer Landscape
Companies are implementing various strategies, such as strategic alliances, partnerships, mergers and acquisitions, geographical expansion, and product/service launches, to enhance their presence in the market.
Ampleon Netherlands BV - The company offers GaN RF devices such as C4H10P600A Power GaN transistor, C4H2327N110A Power GaN transistor, C4H2350N10 Power GaN transistor.
Broadcom Inc. - The company offers GaN RF devices such as GaN E HEMT GS66508T half bridge evaluation board, GaN X GaN transistor half bridge evaluation board, GaN X GaN transistor reference design board.
Fujitsu Ltd. - The company offers GaN RF devices such as GaN high electron mobility transistor HEMT power amplifier with power conversion efficiency of 82.8 percent at a frequency of 2.45 GHz.
The Market growth and forecasting report also includes detailed analyses of the competitive landscape of the market and information about 20 market companies, including:
Market analysis and report of qualitative and quantitative analysis of companies has been conducted to help clients understand the wider business environment as well as the strengths and weaknesses of key market players. Data is qualitatively analyzed to categorize companies as pure play, category-focused, industry-focused, and diversified; it is quantitatively analyzed to categorize companies as dominant, leading, strong, tentative, and weak.
The market research report forecasts market growth by revenue at global, regional & country levels and provides an analysis of the latest trends and growth opportunities from 2018 to 2028
GaN RF Devices Market Scope |
|
Report Coverage |
Details |
Page number |
177 |
Base year |
2023 |
Historic period |
2018-2022 |
Forecast period |
2024-2028 |
Growth momentum & CAGR |
Accelerate at a CAGR of 17.42% |
Market Growth 2024-2028 |
USD 1,610 million |
Market structure |
Fragmented |
YoY growth 2023-2024(%) |
17.22 |
Regional analysis |
APAC, Europe, North America, South America, and Middle East and Africa |
Performing market contribution |
APAC at 57% |
Key countries |
US, China, Japan, South Korea, and Germany |
Competitive landscape |
Leading Companies, Market Positioning of Companies, Competitive Strategies, and Industry Risks |
Key companies profiled |
Ampleon Netherlands BV, Broadcom Inc., Fujitsu Ltd., GaN Systems, Infineon Technologies AG, Integra Technologies Inc., MACOM Technology Solutions Inc., Microchip Technology Inc., Mitsubishi Electric Corp., Northrop Grumman Corp., NXP Semiconductors NV, Qorvo Inc., Raytheon Technologies Corp., RFHIC Corp., STMicroelectronics International N.V., Sumitomo Electric Industries Ltd., Texas Instruments Inc., Toshiba Corp., United Monolithic Semiconductors Holding SAS, and NTT Advanced Technology Corp. |
Market dynamics |
Parent market analysis, Market growth inducers and obstacles, Fast-growing and slow-growing segment analysis, COVID-19 impact and recovery analysis and future consumer dynamics, Market condition analysis for the forecast period. |
Customization purview |
If our report has not included the data that you are looking for, you can reach out to our analysts and get segments customized. |
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1 Executive Summary
2 Market Landscape
3 Market Sizing
4 Historic Market Size
5 Five Forces Analysis
6 Market Segmentation by Application
7 Market Segmentation by Material
8 Customer Landscape
9 Geographic Landscape
10 Drivers, Challenges, and Trends
11 Vendor Landscape
12 Vendor Analysis
13 Appendix
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