Global GaN Devices Market 2016-2020

  • Published: Oct 2016
  • Pages: 64
  • SKU: IRTNTR10603

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The global GaN devices market report provides an analysis of the market by product type (power semiconductor and opto semiconductor), by end-user application (CATV, cellular infrastructure, defense, and others), and by geography (the Americas, APAC, and EMEA). The report also provides an analysis of the market’s competitive landscape and offers information on several companies including Avago Technologies, Cree, GaN Systems, Infineon Technologies, OSRAM Opto Semiconductors, and Qorvo.


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Overview of the global GaN devices market

Market research analysts at Technavio predict that the global GaN devices market will grow steadily during the next four years and will post a CAGR of almost 16% by 2020. This market research analysis report identifies the increased use of GaN in electronic warfare by the defense sector as one of the primary growth factors for this market. The modernization of defense equipment has subsequently increased the demand for high-powered semiconductor devices. This will drive the demand for GaN-based RF power amplifiers as they are more-efficient and offer better bandwidth performance than the traditional silicon amplifiers. GaN, when used in radars, delivers higher performance in terms of power and radar range, which will reduce the number of radars required to monitor the same perimeter. This will substantially reduce operational costs. Due to its enhanced performance, GaN will soon find applications in anti-IED (improvised explosive devices) and phased-array radars, in turn, driving the growth of the market.

This market research report predicts that in terms of geographical regions, APAC will be the major revenue contributor to the market throughout the next four years. The shift in focus of several companies in the region toward RF technologies and the availability of efficient design and technology to fabricate semiconductor devices such as transistors and other equipment, will drive market growth in this region.

Competitive landscape and key vendors

Due to the presence of a considerable number of vendors, this global market appears to be fragmented. Since all market players equally compete to gain majority of the market shares, the competitive environment is quite fierce. Vendors are currently focusing on increasing their R&D investments and develop new products that will help them expand their customer base. Though the market has significant entry barriers such as high capital requirements, which prevent the entry of new players, the market’s growth potential will attract new vendors who will focus on providing low-cost products to gain market shares.

The leading vendors in the market are -

  • Avago Technologies
  • Cree
  • GaN Systems
  • Infineon Technologies
  • OSRAM Opto Semiconductors
  • Qorvo

The other prominent vendors in the market are Nichia, Bridgelux, Efficient Power Conversion, NXP Semiconductors, Panasonic Semiconductors, Toyoda Gosei, and Gallia Semiconductor.


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Segmentation by product type and analysis of the GaN devices market

  • Power semiconductor
  • Opto semiconductor

According to this market research and analysis report, the opto semiconductor segment accounted for the maximum shares and dominated the market during 2015. The increasing adoption of GaN opto-semiconductors by various sectors such as military, aerospace and defense, and consumer electronics, will drive the growth of the market in the next few years.

Segmentation by end-user application and analysis of the GaN devices market

  • Cable television (CATV)
  • Cellular infrastructure
  • Defense

This market study report predicts that the cellular infrastructure segment will be the major revenue contributor to the market throughout the forecast period. The growing adoption of 4G networks across the world will increase the demand for high-power transistors and base stations, which will consecutively result in increasing the adoption of GaN devices. Moreover, the high volume sales of smartphones and the adoption of long-term evolution (LTE) networks in emerging countries such as China has resulted in increasing mobile data usage. This will demand the installation of new base stations and will in turn, propel the market’s growth prospects.

Key questions answered in the report include

  • What will the market size and the growth rate be in 2020?
  • What are the key factors driving the global GaN devices market?
  • What are the key market trends impacting the growth of the global GaN devices market?
  • What are the challenges to market growth?
  • Who are the key vendors in the global GaN devices market?
  • What are the market opportunities and threats faced by the vendors in the global GaN devices market?
  • Trending factors influencing the market shares of the Americas, APAC, and EMEA.
  • What are the key outcomes of the five forces analysis of the global GaN devices market?

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Table of Contents

PART 01: Executive summary

  • Highlights

PART 02: Scope of  the report

  • Market overview

PART 03: Market research methodology

  • Research methodology
  • Economic indicators

PART 04: Introduction

  • Key market highlights

PART 05: Industry overview

  • Technology landscape

PART 06: Market landscape

  • GaN foundry overview
  • Global GaN devices market size and forecast
  • Five forces analysis

PART 07: Market segmentation by type

  • Product segmentation
  • Global GaN opto-semiconductor device market 2015-2020
  • Global GaN power semiconductor devices market 2015-2020

PART 08: Market segmentation  by end-user application 

  • Market overview
  • GaN devices in cellular infrastructure sector
  • GaN devices in the defense sector
  • GaN devices in CATV
  • GaN devices in other sectors

PART 09: Geographical segmentation

  • Global GaN devices market by geography 2015-2020
  • GaN devices market in APAC
  • GaN devices market in Americas
  • GaN devices market in EMEA

PART 10: Market drivers

  • Growing popularity of GaN-based LED
  • Increased use of GaN in EW in defense sector
  • Adoption of GaN substrates in RF semiconductor devices

PART 11: Impact of drivers

PART 12: Market challenges

  • High investment requirements
  • Limited thermal tolerance of GaN LEDs
  • Scarcity of GaN semiconductor professionals

PART 13: Impact of drivers and challenges

PART 14: Market trends

  • Growing prominence of GaN electric vehicle (EV) charger
  • Increased adoption of GaN power amplifiers
  • Rising prominence of GaN die
  • Emergence of other GaN-based applications

PART 15: Vendor landscape

  • Competitive scenario
  • Major vendors 2015
  • Other prominent vendors

PART 16: Appendix

  • List of abbreviations

PART 17: Explore Technavio

Research Framework

Technavio presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources. The analysts have presented the various facets of the market with a particular focus on identifying the key industry influencers. The data thus presented is comprehensive, reliable, and the result of extensive research, both primary and secondary.


Primary sources

  • Manufacturers and suppliers
  • Channel partners
  • Industry experts
  • Strategic decision makers

Secondary sources

  • Industry journals and periodicals
  • Government data
  • Financial reports of key industry players
  • Historical data
  • Press releases


Data Synthesis

  • Collation of data
  • Estimation of key figures
  • Analysis of derived insights

Data Validation

  • Triangulation with data models
  • Reference against proprietary databases
  • Corroboration with industry experts



  • Market drivers
  • Market challenges
  • Market trends
  • Five forces analysis


  • Market size and forecast
  • Market segmentation
  • Geographical insights
  • Competitive landscape
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