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The gallium nitride (GAN) semiconductor devices market size is forecast to increase by USD 5.25 billion between 2022 and 2027, accelerating at a CAGR of 24.5%. In 2017, China held the largest market share, projecting an annual revenue of USD 383.92 million. The burgeoning demand for GAN semiconductor devices serves as a pivotal driver for market expansion. GAN, renowned for its superior electrical properties, has supplanted conventional materials like silicon and gallium arsenide across various applications, notably in power electronics and RF components. Several factors contribute to the escalating demand for GAN semiconductor devices. Primarily, the imperative for high-speed data transfer and high-frequency RF communication has propelled GaN's prominence, owing to its adeptness at operating efficiently in high-frequency environments.
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The report covers market industry forecast and is segmented into Product including opto semiconductors and power semiconductors, End-user including defense and aerospace, consumer electronics, ICT, automotive, and industrial and others, and Geography, including APAC, North America, Europe, South America, and Middle East and Africa. The market size, historical market size (2017-2021), and forecasts are provided on the basis of value (USD million) for all the above segments.
Opto Semiconductors Segment is the Leading Segment to Dominate the Market
The opto semiconductors segment was valued at USD 1.43 billion in 2017 and continued to grow until 2021.LED lights are eco-friendly due to their low power consumption, extended lifespan, and lack of harmful substances like mercury. GaN-based opto semiconductors, used in high-resolution displays, offer brighter, more vibrant colors for applications like gaming and virtual reality. GaN-based solar cells, with higher efficiency and durability compared to traditional silicon-based cells, are gaining importance with the growing demand for renewable energy sources. GaN-based opto semiconductors are also essential in optical communication systems, enabling high-speed light generation and detection for high-data-rate communication systems. These factors are expected to drive growth in the gallium nitride semiconductor devices market's opto semiconductor segment in the coming years.
Market - Revenue Share by Product Segment, 2017-2027
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APAC Holds a Prominent Position in the Market
APAC is estimated to contribute 64% to the growth of the global market during the forecast period. APAC plays a vital role in the global GaN semiconductor devices market due to its robust economy. Factors such as industrialization, technological advancements, and the demand for energy-efficient devices are driving market growth in the region.
Consumer electronics, including smartphones and laptops, benefit from GaN technology's high performance and energy efficiency. Additionally, the renewable energy sector adopts GaN technology in solar inverters and wind turbines, enhancing efficiency. In the automotive industry, APAC's prominence as a producer and consumer drives the adoption of GaN-based devices in electric and hybrid vehicles. Furthermore, GaN semiconductor devices find applications in high-performance computing systems in data centers and telecom infrastructure, catering to the growing demands of cloud computing and IoT. These factors are set to propel the growth of the regional GaN semiconductor devices market in the forecast period.
Market Size, By Region, Global, 2017-2027
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The market is witnessing significant growth driven by the demand for higher efficiency across various sectors. GaN semiconductor devices offer superior performance compared to traditional silicon-based devices, making them ideal for applications such as smart grid systems, electric vehicles, communication devices, and consumer electronics. The market is propelled further by the increasing adoption of GaN devices in the automotive, aerospace, and military sectors, as well as in healthcare for applications like MRI scanning equipment. Key players like Qorvo and GaN Systems are leading the market with innovative products such as the QPD1009 GaN transistors and 5G multi-chip modules. With continuous new product launches and advancements in GaN technology, the market is poised for substantial growth, catering to diverse applications across commercial and defense sectors.
An increase in demand for GAN semiconductor devices is a key factor driving the market growth. GaN, a semiconductor material known for its superior electrical properties, has replaced traditional materials like silicon and gallium arsenide in applications such as power electronics and RF components. The growing demand for GaN semiconductor devices is driven by several factors. Firstly, the need for high-speed data transfer and high-frequency RF communication has boosted GaN's popularity due to its ability to operate efficiently at high frequencies.
Secondly, there's a growing demand for energy-efficient power electronics in areas like EVs, solar inverters, and data centers, where GaN-based solutions offer higher efficiency and compact size. Moreover, the proliferation of portable devices like smartphones and laptops is increasing the demand for GaN-based power management devices, known for their high power densities and cost-effectiveness. In the medical field, GaN-based laser diodes are gaining traction due to their brightness and efficiency in applications like photodynamic therapy and diagnosis. Lastly, the military and aerospace sectors are embracing GaN-based devices for their reliability in harsh environments. These factors are expected to drive global GaN market growth in the coming years.
The Gallium Nitride (GaN) Semiconductor Devices Market is fragmented in nature. Some significant players include Efficient Power Conversion Corp., Fujitsu Ltd., Infineon Technologies AG, MACOM Technology Solutions Holdings Inc., Microchip Technology Inc.
The research report also includes detailed analyses of the competitive landscape of the market and information about 15 market companies, including:
Mitsubishi Electric Corp., Nexgen Power Systems Inc., Nichia Corp., Nippon Telegraph and Telephone Corp., Northrop Grumman Systems Corp., NXP Semiconductors NV, OSRAM GmbH, Panasonic Holdings Corp., Texas Instruments Inc., Toshiba Corp., Wolfspeed Inc., Qorvo Inc., and Transphorm Inc.
The market report forecasts market growth by revenue at global, regional & country levels and provides an analysis of the latest trends and growth opportunities from 2017 - 2027.
The market is experiencing rapid growth, driven by various factors such as saturation velocity and high voltage breakdown capabilities. GaN devices offer low power consumption capabilities, making them ideal for various applications, including switching devices, communication devices, and smart grid systems. With the rise of electric vehicles and the increasing demand for energy-efficient solutions, GaN semiconductor devices are gaining traction in the semiconductor industry. GaN's wide bandgap property enables innovative applications in RF power and opto-semiconductors, catering to sectors like commercial, radar, and healthcare, where high-performance and miniaturization are crucial. The market sees continual growth with new product launches like QPD1009 GaN transistors and advancements in GaN-based power transistors, meeting the evolving demands of industries such as communications, healthcare, and electric vehicles.
Moreover, the market is witnessing significant growth driven by increasing demand for RF power applications in analog semiconductors and communications sectors. GaN devices find extensive use in CATV and healthcare industries, particularly in hospitals where they power scanning equipment including MRI and sonograms, as well as miniaturized x-ray machines. Despite challenges such as disruptions in global supply chains due to lockdowns, GaN technology continues to gain traction, especially in Electric Vehicles (EV) and 5G multi-chip modules. Key players like GaN Systems and Cambridge GaN Devices are driving innovation in GaN radio frequency devices, catering to various applications such as LiDAR and pulsed laser systems. The market is segmented into transistor and power IC segments, with Field Effect Transistors (FET) and Insulated Gate Bipolar Transistors (IGBT) leading the way in GaN semiconductor device advancements.
Gallium Nitride (GaN) Semiconductor Devices Market Scope |
|
Report Coverage |
Details |
Page number |
167 |
Base year |
2022 |
Historic period |
2017 - 2021 |
Forecast period |
2023-2027 |
Growth momentum & CAGR |
Accelerate at a CAGR of 24.5% |
Market growth 2023-2027 |
USD 5.25 billion |
Market structure |
Fragmented |
YoY growth 2022-2023(%) |
20.5 |
Regional analysis |
APAC, North America, Europe, South America, and Middle East and Africa |
Performing market contribution |
APAC at 64% |
Key countries |
US, China, Japan, South Korea, and Germany |
Competitive landscape |
Leading Companies, Market Positioning of Companies, Competitive Strategies, and Industry Risks |
Key companies profiled |
Efficient Power Conversion Corp., Fujitsu Ltd., Infineon Technologies AG, MACOM Technology Solutions Holdings Inc., Microchip Technology Inc., Mitsubishi Electric Corp., Nexgen Power Systems Inc., Nichia Corp., Nippon Telegraph and Telephone Corp., Northrop Grumman Systems Corp., NXP Semiconductors NV, OSRAM GmbH, Panasonic Holdings Corp., Texas Instruments Inc., Toshiba Corp., Wolfspeed Inc., Qorvo Inc., and Transphorm Inc. |
Market dynamics |
Parent market analysis, market growth and trends, market forecasting, Market growth inducers and obstacles, Fast-growing and slow-growing segment analysis, COVID 19 impact and recovery analysis and future consumer dynamics, Market condition analysis for forecast period |
Customization purview |
If our report has not included the data that you are looking for, you can reach out to our analysts and get segments customized. |
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1 Executive Summary
2 Market Landscape
3 Market Sizing
4 Historic Market Size
5 Five Forces Analysis
6 Market Segmentation by Product
7 Market Segmentation by End-user
8 Customer Landscape
9 Geographic Landscape
10 Drivers, Challenges, and Trends
11 Vendor Landscape
12 Vendor Analysis
13 Appendix
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