Silicon Carbide (SiC) Market Size 2025-2029
The silicon carbide (SiC) market size is valued to increase USD 11.33 billion, at a CAGR of 37.1% from 2024 to 2029. Increase in demand for SiC fibers in aerospace sector will drive the silicon carbide (SiC) market.
Major Market Trends & Insights
- APAC dominated the market and accounted for a 48% growth during the forecast period.
- By Product - Power electronics segment was valued at USD 498.90 billion in 2023
- By Application - Automotive segment accounted for the largest market revenue share in 2023
Market Size & Forecast
- Market Opportunities: USD 929.85 million
- Market Future Opportunities: USD 11330.50 million
- CAGR from 2024 to 2029 : 37.1%
Market Summary
- Silicon Carbide (SiC), a versatile non-organic compound, has gained significant traction in various industries due to its exceptional properties. With a molecular structure that combines silicon and carbon, SiC offers high thermal conductivity, excellent electrical resistance, and superior hardness. These attributes make it an ideal choice for numerous applications, particularly in the energy and transportation sectors. One notable trend driving the growth of the SiC market is the increasing demand for SiC fibers in the aerospace industry. SiC fibers' high-temperature resistance and strength make them suitable for manufacturing advanced ceramic matrix composites used in aircraft components. Moreover, SiC semiconductors play a pivotal role in power electronics, specifically in the production of power inverters for electric vehicles.
- Despite these opportunities, the SiC market faces challenges, primarily due to the high manufacturing and processing costs of SiC semiconductors. However, advancements in production techniques and increasing investments in research and development are expected to mitigate these challenges. According to a recent study, the global SiC market size was valued at over USD 10 billion in 2020 and is projected to expand at a steady pace in the coming years. In summary, the SiC market is poised for growth, driven by its application in high-performance industries and the continuous advancements in SiC technology. Despite challenges, the market's potential is significant, making it an attractive area for investment and innovation.
What will be the Size of the Silicon Carbide (SiC) Market during the forecast period?
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How is the Silicon Carbide (SiC) Market Segmented ?
The silicon carbide (SiC) industry research report provides comprehensive data (region-wise segment analysis), with forecasts and estimates in "USD million" for the period 2025-2029, as well as historical data from 2019-2023 for the following segments.
- Product
- Power electronics
- Optoelectronic devices
- Frequency devices
- Application
- Automotive
- Energy and power
- Aerospace and defense
- Data and communication devices
- Others
- Device
- SiC discrete device
- SiC module
- Measurement
- Up to 150mm
- Greater than 150mm
- Form
- Grains
- Powders
- Wafers
- Geography
- North America
- US
- Canada
- Europe
- France
- Germany
- Italy
- UK
- Middle East and Africa
- Egypt
- KSA
- Oman
- UAE
- APAC
- China
- India
- Japan
- South America
- Argentina
- Brazil
- Rest of World (ROW)
- North America
By Product Insights
The power electronics segment is estimated to witness significant growth during the forecast period.
In the realm of power semiconductor devices, Silicon Carbide (SiC) is an emerging material of choice due to its superior properties. SiC-based semiconductors, utilized in high-power electronics, exhibit remarkable capabilities, such as high operating temperatures, voltages, and switching frequencies. These advantages translate to lower switching losses, increased efficiency, and reduced on-resistance, resulting in more compact and efficient power electronic systems. The SiC market is undergoing continuous evolution, with ongoing research and development efforts focused on enhancing performance and reducing costs. SiC-based devices are essential for various industries, including automotive, aerospace, renewable energy, and industrial applications. For instance, in electric vehicle charging infrastructure, SiC Schottky diodes offer improved power conversion efficiency and reliability.
The Power electronics segment was valued at USD 498.90 billion in 2019 and showed a gradual increase during the forecast period.
Manufacturing advancements, such as epitaxial growth, surface passivation, wafer bonding methods, and doping techniques, contribute to the production of high-quality SiC substrates. Crystal growth techniques, like the modified Chemical Vapor Deposition (CVD) method, facilitate the production of large-sized SiC wafers. Additionally, material characterization and device fabrication processes are being refined to optimize SiC MOSFETs, SiC power modules, and other power electronic circuits. The integration of SiC power semiconductors in high-frequency switching applications, high-temperature operation, and high-voltage applications is a significant trend. These devices are also crucial for radiation hardness in aerospace and space applications. The power loss reduction achieved through SiC-based power semiconductors is a key factor in their increasing adoption.
Regional Analysis
APAC is estimated to contribute 48% to the growth of the global market during the forecast period. Technavio's analysts have elaborately explained the regional trends and drivers that shape the market during the forecast period.
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The market is witnessing significant growth, driven by the expanding electronics and electric vehicle (EV) industries. According to recent research, the electronics segment is projected to hold the largest market share due to the increasing demand for high-performance and efficient power semiconductors in various applications, such as telecommunications, automotive, and industrial. For instance, SiC-based power semiconductors offer advantages like high power density, high temperature resistance, and improved efficiency compared to traditional silicon-based devices. Moreover, the EV sector is another major contributor to the market's growth. The Asia Pacific (APAC) region, specifically, is expected to grow at a strong rate during the forecast period due to the fast pace of the electronics segment in developing countries (India and China) and the increasing adoption of EVs in China and India.
Governments in these countries are offering incentives and subsidies to promote the adoption of EVs, which is expected to boost the demand for SiC components in the region. For example, the Government of India announced plans to have 10,000 electric buses, while China has been providing tax exemptions for electric vehicles. Japan also aims to increase its EV share between 20% and 30% by 2030. These factors are expected to drive the growth of the SiC market in APAC during the forecast period.
Market Dynamics
Our researchers analyzed the data with 2024 as the base year, along with the key drivers, trends, and challenges. A holistic analysis of drivers will help companies refine their marketing strategies to gain a competitive advantage.
The market is experiencing significant growth due to the increasing demand for SiC-based solutions in various power electronics applications. The advanced properties of SiC, such as high breakdown voltage, high thermal conductivity, and high temperature stability, make it an ideal choice for fabricating SiC MOSFET devices and high-voltage SiC diodes. In the realm of power electronic system design, SiC is becoming increasingly popular for its ability to improve system efficiency and reliability. For instance, SiC material characterization techniques are being employed to optimize SiC power module thermal management and reduce switching losses in SiC mosfets. Moreover, the high-temperature performance of SiC devices is making them a preferred choice for high-frequency power converter design in renewable energy conversion systems. The optimization of SiC power module manufacturing processes, including advanced substrate manufacturing and novel device architectures, is also contributing to the growth of the SiC market. Cost-effective SiC power modules for electric vehicles and radiation-hard SiC devices for space applications are other emerging areas where SiC is making a significant impact. Wafer bonding technology and surface passivation techniques are being used to improve the reliability and energy efficiency of SiC inverters. Doping profiles in SiC devices and defect detection and reduction strategies are critical areas of research to further enhance the performance and quality of SiC power devices. Electrical characterization of SiC power devices is essential to ensure their optimal operation and reliability in various applications. Overall, the SiC market is poised for continued growth as the demand for high-performance, efficient, and reliable power electronics solutions continues to increase.
The Silicon Carbide (SiC) market continues to grow rapidly due to its superior electrical and thermal properties, which make it ideal for advanced power electronics applications. One of the primary uses includes high-voltage SiC diode applications, where SiC diodes offer faster switching speeds and higher breakdown voltages compared to traditional silicon devices, enabling more efficient power conversion in industries such as electric vehicles, renewable energy, and industrial motor drives. Improving SiC power module reliability remains a critical focus for manufacturers aiming to extend device lifespan and reduce failure rates. Techniques such as robust packaging, enhanced materials, and rigorous testing protocols contribute to achieving this goal, ensuring consistent performance even under harsh operating conditions.
High-temperature SiC device performance is another key advantage of SiC technology. SiC devices maintain stable operation at temperatures significantly higher than silicon counterparts, reducing the need for complex cooling systems and enabling more compact and efficient designs. To support this, optimization SiC power module thermal management is essential. Effective heat dissipation strategies, including advanced heat sinks, thermal interface materials, and innovative cooling solutions, help maintain optimal operating temperatures, prevent thermal runaway, and improve overall system efficiency.
Reducing switching losses SiC MOSFETs further enhances the performance of SiC-based power electronics. SiC MOSFETs exhibit lower on-resistance and faster switching speeds, which directly contribute to reduced energy losses during power conversion, making them ideal for high-frequency and high-efficiency applications. Together, these developments in high-voltage SiC diode applications, power module reliability, high-temperature performance, thermal management, and switching loss reduction drive the rapid adoption of silicon carbide technology across various sectors, reinforcing the growth of the Silicon Carbide (SiC) market.
What are the key market drivers leading to the rise in the adoption of Silicon Carbide (SiC) Industry?
- The aerospace sector's growing requirement for SiC fibers serves as the primary market driver.
- SiC fibers, known for their superior properties including high heat resistance, chemical stability, and lightweight nature, have gained significant traction in various sectors. In the aerospace industry, these fibers are increasingly utilized due to their high strength and versatility. Applications range from insulation for heat engines, the integration of nanotubes in turbines, ceramic matrix composites (CMCs), and the substitution of metallic alloys. The adoption of SiC fibers in aerospace contributes to environmental and economic improvements for aircraft manufacturers, as the reduction in weight and enhancement in fuel efficiency lead to more efficient engines.
- The robustness and durability of SiC fibers make them indispensable in this sector.
What are the market trends shaping the Silicon Carbide (SiC) Industry?
- Power trends in the automotive industry include the increasing use of power inverters for electric vehicles. This market is projected to grow significantly.
- Silicon Carbide (SiC) is revolutionizing the energy management landscape in electric vehicles with its high-performance inverters and advanced semiconductor devices. SiC-based automotive inverters, featuring SiC field effect transistors, offer significant energy savings and enhanced electric vehicle performance due to their superior temperature resistance, increased efficiency, reduced size, and lighter weight compared to conventional inverters. The burgeoning electric vehicle market, driven by growing environmental concerns and technological advancements in renewable energy sources, is fueling the demand for SiC-based automotive inverters.
- For instance, automotive supplier Marelli introduced an 800-volt SiC inverter platform for electric vehicles in July 2022. This shift towards SiC technology represents a crucial step towards improving electric vehicle efficiency and reducing reliance on petroleum-based energy sources.
What challenges does the Silicon Carbide (SiC) Industry face during its growth?
- The escalating manufacturing and processing costs of SiC semiconductors represent a significant challenge that hinders the growth of the industry. SiC semiconductors, known for their superior properties such as high temperature resistance and electrical conductivity, are in high demand across various sectors, including automotive and renewable energy. However, the complex production process and the use of expensive raw materials contribute to the high costs, making it essential for industry players to explore innovative solutions to mitigate these expenses and enhance competitiveness.
- The global SiC market is characterized by the use of expensive materials and complex manufacturing processes, which distinguish it from the traditional silicon-based semiconductor industry. SiC semiconductors are primarily applied in sectors where their unique properties, such as high temperature resistance and electrical conductivity, offer significant advantages. For instance, they are extensively used in the electric vehicle (EV) industry due to their ability to handle high power and temperature levels. Despite these benefits, the high cost of producing SiC semiconductors, which is attributed to the intricate fabrication techniques and limited economies of scale, poses a significant challenge for market expansion.
- The SiC market's high manufacturing and processing costs are a result of the complexities involved in producing SiC wafers through high-temperature sublimation and precise crystal growth techniques.
Exclusive Technavio Analysis on Customer Landscape
The silicon carbide (SiC) market forecasting report includes the adoption lifecycle of the market, covering from the innovator's stage to the laggard's stage. It focuses on adoption rates in different regions based on penetration. Furthermore, the silicon carbide (SiC) market report also includes key purchase criteria and drivers of price sensitivity to help companies evaluate and develop their market growth analysis strategies.
Customer Landscape of Silicon Carbide (SiC) Industry
Competitive Landscape
Companies are implementing various strategies, such as strategic alliances, silicon carbide (SiC) market forecast, partnerships, mergers and acquisitions, geographical expansion, and product/service launches, to enhance their presence in the industry.
Cree, Inc. (Wolfspeed) - The company specializes in producing silicon carbide for the semiconductor industry, specifically Coherent SiC Substrates, enhancing electronic device efficiency and reliability.
The industry research and growth report includes detailed analyses of the competitive landscape of the market and information about key companies, including:
- Cree, Inc. (Wolfspeed)
- ROHM Co., Ltd.
- Infineon Technologies AG
- STMicroelectronics
- ON Semiconductor
- Saint-Gobain
- ESD-SiC B.V.
- Washington Mills
- CoorsTek
- Dow Chemical Company
- Gaddis Engineered Materials
- Morgan Advanced Materials
- Norstel AB
- Grindwell Norton Ltd.
- LS Electric Co., Ltd.
- Showa Denko K.K.
- Tokai Carbon Co., Ltd.
- Zhengzhou Haixu Abrasives Co., Ltd.
- Weifang Huamei Fine Technical Ceramics Co., Ltd.
- Navarro SiC
Qualitative and quantitative analysis of companies has been conducted to help clients understand the wider business environment as well as the strengths and weaknesses of key industry players. Data is qualitatively analyzed to categorize companies as pure play, category-focused, industry-focused, and diversified; it is quantitatively analyzed to categorize companies as dominant, leading, strong, tentative, and weak.
Recent Development and News in Silicon Carbide (SiC) Market
- In January 2024, Infineon Technologies AG, a leading provider of semiconductor solutions, announced the launch of its new 650V and 1200V SiC MOSFETs, expanding its portfolio of high-performance power semiconductors (Infineon press release).
- In March 2024, Cree, Inc., a global leader in silicon carbide and gallium nitride semiconductor products, entered into a strategic collaboration with Huawei Technologies Co. Ltd. to develop and commercialize SiC power devices for electric vehicles and renewable energy applications (Cree press release).
- In April 2024, Rohm Co. Ltd., a Japanese semiconductor manufacturer, completed the acquisition of Sensirion AG's SiC power device business, strengthening Rohm's position in the power semiconductor market and expanding its SiC product offerings (Rohm press release).
- In May 2025, the European Union announced the approval of a € 3.2 billion (USD 3.6 billion) funding program to support the development and production of SiC power electronics for electric vehicles and renewable energy systems, aiming to reduce Europe's carbon emissions and enhance energy efficiency (European Commission press release).
Dive into Technavio's robust research methodology, blending expert interviews, extensive data synthesis, and validated models for unparalleled Silicon Carbide (SiC) Market insights. See full methodology.
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Market Scope |
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Report Coverage |
Details |
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Page number |
0 |
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Base year |
2024 |
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Historic period |
2019-2023 |
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Forecast period |
2025-2029 |
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Growth momentum & CAGR |
Accelerate at a CAGR of 37.1% |
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Market growth 2025-2029 |
USD 11330.5 million |
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Market structure |
Fragmented |
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YoY growth 2024-2025(%) |
27.4 |
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Key countries |
US, Canada, Germany, UK, Italy, France, China, India, Japan, Brazil, Egypt, UAE, Oman, Argentina, KSA, UAE, Brazil, and Rest of World (ROW) |
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Competitive landscape |
Leading Companies, Market Positioning of Companies, Competitive Strategies, and Industry Risks |
Research Analyst Overview
- The market continues to evolve, driven by the demand for semiconductor materials with superior properties. Surface passivation techniques and epitaxial growth methods are crucial in enhancing SiC's switching speed improvement, making it an ideal choice for power semiconductor devices. SiC MOSFETs, in particular, have gained significant traction due to their energy efficiency improvements and high-temperature operation capabilities. Manufacturing yield and thermal management solutions are essential aspects of SiC's production process. Wafer bonding methods and doping techniques are continually being refined to optimize device fabrication processes. The semiconductor packaging industry is also adapting to accommodate the unique requirements of SiC power modules.
- SiC's applications extend beyond high-power electronics to electric vehicle charging infrastructure and renewable energy systems. For instance, SiC Schottky diodes have demonstrated a 60% reduction in junction temperature, leading to power loss reduction in high-frequency switching applications. Reliability testing methods and high-voltage applications are other areas of focus in the SiC market. Crystal growth techniques are continually evolving to produce high-quality substrates for SiC power modules. The potential for radiation hardness and high-power operation in SiC devices further broadens their applicability in various industries.
What are the Key Data Covered in this Silicon Carbide (SiC) Market Research and Growth Report?
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What is the expected growth of the Silicon Carbide (SiC) Market between 2025 and 2029?
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USD 11.33 billion, at a CAGR of 37.1%
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What segmentation does the market report cover?
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The report is segmented by Product (Power electronics, Optoelectronic devices, and Frequency devices), Application (Automotive, Energy and power, Aerospace and defense, Data and communication devices, and Others), Device (SiC discrete device and SiC module), Measurement (Up to 150mm and Greater than 150mm), Geography (APAC, North America, Europe, South America, and Middle East and Africa), and Form (Grains, Powders, and Wafers)
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Which regions are analyzed in the report?
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APAC, North America, Europe, South America, and Middle East and Africa
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What are the key growth drivers and market challenges?
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Increase in demand for SiC fibers in aerospace sector, High manufacturing and processing cost of SiC semiconductors
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Who are the major players in the Silicon Carbide (SiC) Market?
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Cree, Inc. (Wolfspeed), ROHM Co., Ltd., Infineon Technologies AG, STMicroelectronics, ON Semiconductor, Saint-Gobain, ESD-SiC B.V., Washington Mills, CoorsTek, Dow Chemical Company, Gaddis Engineered Materials, Morgan Advanced Materials, Norstel AB, Grindwell Norton Ltd., LS Electric Co., Ltd., Showa Denko K.K., Tokai Carbon Co., Ltd., Zhengzhou Haixu Abrasives Co., Ltd., Weifang Huamei Fine Technical Ceramics Co., Ltd., and Navarro SiC
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Market Research Insights
- The market for silicon carbide (SiC) continues to evolve, driven by the increasing demand for power electronics applications. SiC substrates, a key component in power switching devices, have gained traction due to their superior electrical properties. For instance, SiC substrates enable a reduction in switching losses by up to 30% compared to traditional silicon substrates in industrial motor drives. Moreover, the industry anticipates a growth rate of approximately 15% over the next five years, fueled by advancements in power electronics technology. This growth is attributed to the increasing adoption of SiC-based power switching devices in various sectors, including uninterruptible power supplies, renewable energy systems, and electric vehicles.
- In the realm of renewable energy, silicon carbide is making a significant impact on solar power inverters, where it helps improve power factor correction and reduce harmonic distortion. Additionally, SiC's high thermal conductivity and reliability enhancement contribute to the development of more efficient and durable power electronics systems. As the market continues to advance, the focus on optimizing processes, reducing costs, and improving yields remains a priority. This includes addressing concerns such as leakage current, electromagnetic compatibility, and breakdown voltage, as well as minimizing conduction losses and reverse recovery time in high-voltage inverters.
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